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Bulletin I27105 rev. B 02/02
T..RIA SERIES
MEDIUM POWER PHASE CONTROL THYRISTORS Features
Electrically isolated base plate Types up to 1200 V RRM 3500 V RMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved
Power Modules
50 A 70 A 90 A
Description
These series of T-modules are inteded for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built.
Major Ratings and Characteristics
Parameters T50RIA
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz It
2
T70RIA T90RIA
70 70 110 1660 1740 13860 12650 138500 100 to 1200 -40 to 125 90 70 141 1780 1870 15900 14500 159100
Units
A
o
50 70 80 1310 1370 8550 7800 85500
C
A A A A2s A2s A2s V
o
@ 50Hz @ 60Hz
I2t VDRM/VRRM TJ
C
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T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive Code peak reverse voltage peak reverse voltage V V
10 20 T50RIA T70RIA T90RIA 40 60 80 100 120 100 200 400 600 800 1000 1200 150 300 500 700 900 1100 1300 100
IDRM/IRRM max. @ 25C A
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Maximum peak, one-cycle on-state, non-repetitive surge current
T50RIA
50 70 80 1310 1370 1100 1150
T70RIA
70 70 110 1660 1740 1400 1460 13860 12650 9800 8950 138500 0.77 0.88 3.6 3.2 1.55
T90RIA
90 70 141 1780 1870 1500 1570 15900 14500 11250 10270 159100 0.78 0.88 2.9 2.6 1.55
Units Conditions
A C A A t = 10ms No voltage 180 conduction, half sine wave
t = 8.3ms reapplied t = 10ms 100% VRRM Sine half wave, Initial TJ = TJ max. No voltage
t = 8.3ms reapplied A2s t = 10ms
I2t
Maximum I2t for fusing
8550 7800 6050 5520
t = 8.3ms reapplied t = 10ms 100% VRRM
t = 8.3ms reapplied A2s V t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), @ TJ max. (I > x IT(AV)), @ TJ max. m (16.7% x x IT(AV) < I < x IT(AV)), @ TJ max. (I > x IT(AV)), @ TJ max. V ITM = x IT(AV), TJ = 25C., tp = 400s square Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2 Anode supply = 6V initial IT = 30A, TJ = 25C Anode supply = 6V resistive load = 10 gate pulse: 10V, 100s, TJ = 25C
I2t
Maximum I2t for fusing voltage
85500 0.97 1.13 4.1 3.3 1.60
VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop
Maximum holding current Maximum latching current
200 400
mA mA
Switching
Parameter
tgd trr tq Typical turn-on time Typical reverse recovery time Typical turn-off time
T50RIA
T70RIA
0.9 3.0 110
T90RIA
Units Conditions
s s s TJ = 25oC Vd = 50% VDRM, ITM = 50 A Ig = 500mA, tr <= 0.5, tp >= 6s TJ =125C, ITM = 50A tp = 300s di/dt =10A/s TJ = TJ max., ITM = 50A, tp = 300s, -di/dt = 15A/s, Vr = 100V; linear to 80%VDRM
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T..RIA Series
Bulletin I27105 rev. B 02/02
Blocking
Parameter
IRRM IDRM VINS dv/dt Maximum peak reverse and off-state leakage current RMS isolation voltage Critical rate of rise of off-state voltage 3500 500 V V/s 50Hz, circuit to base, all terminals shorted, TJ = 25C, t = 1s TJ = TJ max., linear to 80% rated VDRM (1)
T50RIA
T70RIA
15
T90RIA
Units Conditions
mA TJ = TJ = TJ max.
(1) Available with dv/dt = 1000V/s, to complete code add S90 i.e. T90RIA80S90
Triggering
Parameter
PGM IGM -VGT VGT Max. peak gate power
T50RIA
10 2.5 2.5 10 4.0 2.5 1.5 250 100 50 0.2 5.0
T70RIA
12 3.0 3.0 10 4.0 2.5 1.5 270 120 60 0.2 6.0 200 180 160 150
T90RIA
12 3.0 3.0 10 4.0 2.5 1.5 270 120 60 0.2 6.0
Units Conditions
W W A V V TJ = - 40C TJ = 25C TJ = TJ max. TJ = - 40C mA V mA A/s VD = 0.67 rated VDRM, ITM = 2 x rated di/dt Ig = 400mA for T50RIA and Ig = 500mA for T70RIA & T90RIA; tr < 0.5s, tp >= 6s For repetitive value use 40% non-repetitive Per JEDEC std. RS397,5.2.2.6 TJ = 25C TJ = TJ max. @ TJ = TJ max., rated VDRM applied Anode supply = 6V, resistive load; Ra = 1 Anode supply = 6V, resistive load; Ra = 1 tp 5ms, TJ = TJ max. f=50Hz, TJ = TJ max. tp 5ms, TJ = TJ max.
PG(AV) Max. average gate power Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD IGD di/dt Max. gate voltage that will not trigger Max. gate current that will not trigger Max. rate of rise of turned-on current
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T wt Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque 10% Case style to heatsink terminals 1.3 10% 3 10% 54 D-56 g Nm M5 screw terminals See outline table T type M3.5 mounting screws (2) non lubricated threads 0.2 K/W Mounting surface smooth, flat and greased 0.65 0.50 0.38 K/W DC operation, per junction -40 to 150 C
T50RIA
T70RIA
-40 to 125
T90RIA
Units Conditions
C
Approximate weight
(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound.
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T..RIA Series
Bulletin I27105 rev. B 02/02
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
T50RIA T70RIA T90RIA
Sinusoidal conduction @ TJ max.
180o 0.08 0.07 0.05 120o 0.10 0.08 0.06 90o 0.13 0.10 0.08 60o 0.19 0.14 0.12 30o 0.31 0.24 0.20 180o 0.06 0.05 0.04
Rectangular conduction @ TJ max.
120o 0.10 0.08 0.06 90o 0.14 0.11 0.09 60o 0.20 0.15 0.12 30o 0.32 0.24 0.20
Units
K/W
Ordering Information Table
Device Code T 50 2 RIA 120
G
Circuit configuration **
1
3
4
1 2 3 4
-
Module type Current rating Circuit configuration ** Voltage code : code x 10 = VRRM
Outline Table
+ -
All dimensions in millimeters (inches)
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T..RIA Series
Bulletin I27105 rev. B 02/02
Maximum Allowable Cas e T emperature ( C) Maximum Allowable Cas e T emperature ( C) 13 0 12 0 11 0 10 0 90 80 70 60 50 0 10 20 30 40 50 60 Average On-s tate Current (A) 30 60 90 1 20 1 80
Conduction Angle
130 120 110 100 90 80 70 60 50 0 10
T 50R IA.. S eries R thJC (DC) = 0.65 K /W
T 50R IA.. S eries R thJC (DC) = 0.65 K /W
Conduction P eriod
90 60 30 20 30 40 120 180 50 60 DC 70 80
Average On-s tate Current (A)
Fig. 1 - Current Ratings Characteristics
80
0 .5
Fig. 2 - Current Ratings Characteristics
Maximum Average On-s tate P ower L os s (W)
70 60 50
180 120 90 60 30 R MS L imit
0.
R
0 .3
7
th S
K/ W
K /W
K /W
A
=0
1
K/ W
.1 K /W
1 .5
2K
-D
K /W
/W
a el t R
40 30
Conduction Angle
3K
/W
20 10 0 0 10 20 30 40 50 0 T 50R IA.. S eries T J = 125 C
5 K /W
10 K /W
20
40
60
80
100
120
Average On-s tate Current (A)
Maximum Allowable Ambient T emperature ( C)
Fig. 3 - On-state Power Loss Characteristics
11 0 10 0 90 80 70 60 50 R MS L imit 40 30 20 10 0 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 Average On-s tate Current (A) Max imum Allowable Ambient T emperature ( C)
Conduction P eriod
Maximum Average On-s tate P ower L os s (W)
DC 1 80 1 20 90 60 30
R
3K 0. /W
A thS
0.
5
=0
0 .7
K/ W K/ W
K .1 /W -D
1K
1.5
a el t
/W
R
K /W 2K /W 3 K /W
T 5 0R IA.. S eries T J = 125 C
5 K /W
Fig. 4 - On-state Power Loss Characteristics
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T..RIA Series
Bulletin I27105 rev. B 02/02
1200 P eak Half S ine Wave On-s tate Current (A) 1100 1000 900 800 700 600 500 1 10 100
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
P eak Half S ine Wave On-s tate Current (A)
At Any R ated L oad Condition And W ith R ated V R R M Applied F ollowing S urge. Initial T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s
1300 1200 1100 1000 900 800 700 600
Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated V R R M eapplied R
T 50R I A.. S eries
T 50R IA.. S eries
500 0.01
0.1 P uls e T rain Duration (s )
1
Fig. 5 - Maximum Non-Repetitive Surge Current
1000 Ins tantaneous On-s tate Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
T J = 25 C 10 T J = 125 C
T 50R IA.. S eries 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Ins tantaneous On-s tate Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
100 Ins tantaneous Gate Voltage (V)
R ectangular gate puls e a) R ecommended load line for rated di/dt : 20V, 30ohms ; tr=0.5 s , tp>=6 s b) R ecommended load line for <=30% rated di/dt : 20V, 65ohms 10 tr=1 s , tp>=6 s (b)
T j=-40 C T j=25 C
(1) P GM = 10W, tp = 5 ms (2) P GM = 20W, tp = 2 ms (3) P GM = 50W, tp = 1 ms (4) P GM = 100W, tp = 500 s
(a)
T j=125 C
1
(1) (2)
(3) (4)
VGD IGD 0.1 0.00 1 0.0 1 0.1 T 50 R IA.. S eries 1 F requency L imited by P G(AV) 10 100 1000
Ins tantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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T..RIA Series
Bulletin I27105 rev. B 02/02
Maximum Allowable Cas e T emperature ( C) Maximum Allowable Cas e T emperature ( C) 130 120 110 100 90 80 70 60 50 0 10 20 30 40 50 60 70 80 Average On-s tate Current (A) 30 60 90 120 180
Conduction Angle
T 70R IA.. S eries R thJC (DC) = 0.50 K /W
130 120 110 100
T 70R IA.. S eries R thJC (DC) = 0.50 K /W
Conduction P eriod
90 80 70 60 50 0 20 40 60 80 100 120 Average On-s tate Current (A) 60 30 90 120 180 DC
Fig. 12 - Current Ratings Characteristics
100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 0 70 20 40
3K
Conduction Angle
Fig. 13 - Current Ratings Characteristics
Maximum Average On-s tate P ower L os s (W)
180 120 90 60 30 R MS L imit
0. 3K /W
K/ W 0. 5
R
th S
0 .7
A
=0
K/ W
K .1
1K
/W
/W
-D el ta
1 .5
2K
K /W
/W
R
/W
5 K /W
T 70R IA.. S eries T J = 125 C
7 K /W
60
80
100
12 0
Average On-s tate Current (A)
Maximum Allowable Ambient T emperature ( C)
Fig. 18 - On-state Power Loss Characteristics
140 120 100 80 R MS L imit 60 40 20 0 0 20 40 60 80 100 0 120 20 40 60 80 100 120 Average On-s tate Current (A) Max imum Allowable Ambient T emperature ( C)
Conduction P eriod
Maximum Average On-s tate P ower L os s (W)
DC 180 120 90 60 30
R
0.
thS
3
A
0 .5
K/ W
= 0. 1 W K/
0 .7
1K
K/ W
-D ta el
K/ W
/W
R
1 .5
2K
K /W
/W
T 70R IA.. S eries T J = 125 C
3 K /W
5 K /W
Fig. 15 - On-state Power Loss Characteristics
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T..RIA Series
Bulletin I27105 rev. B 02/02
1500 P eak H alf S ine Wave On-s tate Current (A) 1400 1300 1200 1100 1000 900 800 700 1 10 100
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
P eak H alf S ine Wave On-s tate Current (A)
At Any R ated L oad Condition And W ith R ated VR R M Applied F ollowing S urge. Initial T J = 125 C @ 6 0 H z 0.0083 s @ 5 0 H z 0.0100 s
170 0 160 0 150 0 140 0 130 0 120 0 110 0 100 0 900 800 700
Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated V R R MR eapplied
T 70R IA.. S eries
T 70R IA.. S eries
600 0.01
0.1 P uls e T rain Duration (s )
1
Fig. 16 - Maximum Non-Repetitive Surge Current
1000 Ins tantaneous On-s tate Current (A)
Fig. 17 - Maximum Non-Repetitive Surge Current
100
T J = 25 C 10 T J = 125 C
T 70R IA.. S eries 1 0 0.5 1 1.5 2 2.5 3 3.5 4 Ins tantaneous On-s tate Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
100 Ins tantaneous Gate Voltage (V)
R ectangular gate puls e a) R ecommended load line for rated di/dt : 20V, 20ohms ; tr=0.5 s , tp>=6 s b) R ecommended load line for <=30 % rated di/dt : 15V, 40ohms 10 tr=1 s , tp>=6 s (b)
T j=-40 C T j=2 5 C
(1) P GM = 12W, tp = 5ms (2) P GM = 30W, tp = 2ms (3) P GM = 60W, tp = 1ms (4) P GM = 200W, tp = 300 s
(a)
T j=125 C
1
(1)
(2) (3)
(4)
VGD 0.1 0.0 01 IGD 0.01 T 70R IA.., T 90R IA.. S eries F requency L imited by P G(AV) 0.1 1 10 100 1000
Ins tantaneous Gate Current (A)
Fig. 19 - Gate Characteristics
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T..RIA Series
Bulletin I27105 rev. B 02/02
Maximum Allowable Cas e T emperature ( C) T 90R IA.. S eries R thJC (DC) = 0.38 K /W
Maximum Allowable Cas e T emperature ( C)
13 0 12 0 11 0 10 0 90 80 70 60 50 0 20
130 120 110 100 90 80 70 60 30 50 0 20
T 90R IA.. S eries R thJC (DC) = 0.38 K /W
Conduction Angle
Conduction P eriod
30
60
90
90 60 120 180 60 80 DC
1 20
1 80 1 00
40
60
80
40
100 120 140 160
Average On-s tate Current (A)
Average On-s tate Current (A)
Fig. 23 - Current Ratings Characteristics
Maximum Average On-s tate P ower L os s (W) 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 0 90 20 40
Conduction Angle
Fig. 24 - Current Ratings Characteristics
180 120 90 60 30 R MS L imit
S R th
0. 3
0. 5K /W
K/ W
A
= /W 1K 0.
0 .7
-D
K /W
ta el
1K /W
R
1 .5
K /W
2 K /W
3 K /W
T 90R IA S eries T J = 12 5 C
60
80
100
120
Average On-s tate Current (A)
Maximum Allowable Ambient T emperature ( C)
Fig. 29 - On-state Power Loss Characteristics
Maximum Average On-s tate P ower L os s (W) 180 160 140 120 100 80 R MS L imit 60 40 20 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C) T 90R IA.. S eries T J = 125 C
Conduction Period
DC 1 80 1 20 90 60 30
R
th S A
= 0.
0.
0. 5
1
3K
W K/
/W
-D ta el
0. 7
K /W
R
K /W 1K /W
1 .5
K /W
2 K/ W
Fig. 29 - On-state Power Loss Characteristics
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T..RIA Series
Bulletin I27105 rev. B 02/02
1600 P eak Half S ine Wave On-s tate Current (A) 1500 1400 1300 1200 1100 1000 900 800 700 1 10 100
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
P eak Half S ine Wave On-s tate Current (A)
At Any R ated L oad Condition And With R ated V R R M Applied F ollowing S urge. Initial T J = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800
Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated VR R M R eapplied
T 90R IA.. S eries
T 90R IA.. S eries
700 0.01
0.1 P uls e T rain Duration (s )
1
Fig. 27 - Maximum Non-Repetitive Surge Current
1000 Ins tantaneous On-s tate Current (A)
Fig. 28 - Maximum Non-Repetitive Surge Current
100
T J = 25 C 10 T J = 125 C
T 90R IA.. S eries 1 0 0.5 1 1.5 2 2.5 3 3.5 Ins tantaneous On-s tate Voltage (V)
Fig. 21 - On-state Voltage Drop Characteristics
1 S teady S tate Value R thJC = 0.65 K /W R thJC = 0.50 K /W R thJC = 0.38 K /W (DC Operation) 0.1 T 5 0R IA.. S eries T 70R IA.. S eries T 90R IA.. S eries
T rans ient T hermal Impedance Z thJC (K /W )
0.01 0.0 01
0.01
0.1
1
10
10 0
S quare Wave P uls e Duration (s )
Fig. 34 - Thermal Impedance Z thJC Characteristics
10
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T..RIA Series
Bulletin I27105 rev. B 02/02
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02
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